Technical parameters/forward voltage: | 0.875 V |
|
Technical parameters/thermal resistance: | 52 ℃/W |
|
Technical parameters/reverse recovery time: | 30 ns |
|
Technical parameters/forward current: | 6000 mA |
|
Technical parameters/forward voltage (Max): | 875mV @4A |
|
Technical parameters/forward current (Max): | 6000 mA |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 2 |
|
Encapsulation parameters/Encapsulation: | SQ-MELF |
|
Dimensions/Packaging: | SQ-MELF |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Bulk |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
Customs information/ECCN code: | ECL99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
JAN1N5811US
|
Microsemi | 完全替代 | E-MELF |
ESD 抑制器/TVS 二极管 D MET 6A SFST 150V HR SM
|
||
JANS1N5811US
|
Semtech Corporation | 类似代替 |
Diode Switching 150V 6A 2Pin CSMD
|
|||
|
|
Sensitron Semiconductor | 完全替代 | Case 304 |
Diode Switching Diode 150V 6A 2Pin Case G-112
|
||
|
|
Aeroflex | 完全替代 | 2 |
Diode Switching Diode 150V 6A 2Pin Case G-112
|
||
JANTX1N5811
|
Semtech Corporation | 完全替代 | G-112 |
Diode Switching Diode 150V 6A 2Pin Case G-112
|
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