Technical parameters/forward voltage: 875mV @4A
Technical parameters/reverse recovery time: 30 ns
Technical parameters/forward current: 6000 mA
Technical parameters/forward voltage (Max): 875mV @4A
Technical parameters/forward current (Max): 6 A
Technical parameters/operating temperature (Max): 175 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 2
Encapsulation parameters/Encapsulation: E-MELF
External dimensions/packaging: E-MELF
Other/Product Lifecycle: Active
Other/Packaging Methods: Bag
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards:
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
1N5811US
|
Semtech Corporation | 完全替代 | SQ-MELF |
整流器 D MET 6A SFST 150V SURFACE MNT
|
||
1N5811US
|
Microsemi | 完全替代 | SQ-MELF |
整流器 D MET 6A SFST 150V SURFACE MNT
|
||
JANS1N5811US
|
Semtech Corporation | 类似代替 |
Diode Switching 150V 6A 2Pin E-MELF
|
|||
JANTX1N5811US
|
Sensitron Semiconductor | 完全替代 | MELF-B |
ESD 抑制器/TVS 二极管 D MET 6A SFST 150V HR SM
|
||
JANTX1N5811US
|
Semtech Corporation | 完全替代 | SMD |
ESD 抑制器/TVS 二极管 D MET 6A SFST 150V HR SM
|
||
JANTXV1N5811US
|
Sensitron Semiconductor | 完全替代 | MELF-B |
ESD 抑制器/TVS 二极管 D MET 6A SFST 150V HRV SM
|
||
JANTXV1N5811US
|
Aeroflex | 完全替代 |
ESD 抑制器/TVS 二极管 D MET 6A SFST 150V HRV SM
|
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