Technical parameters/rated voltage (DC): | 60.0 V |
|
Technical parameters/rated current: | 2.70 A |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/drain source voltage (Vds): | 60.0 V |
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Technical parameters/Continuous drain current (Ids): | 2.70 A |
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Technical parameters/rise time: | 110 ns |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 4 |
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Encapsulation parameters/Encapsulation: | SOT-223-3 |
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Dimensions/Packaging: | SOT-223-3 |
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Other/Product Lifecycle: | Unknown |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
|
|
Vishay Precision Group | 类似代替 | SOT-223 |
VISHAY IRLL014PBF. 晶体管, MOSFET, N沟道, 2.7 A, 60 V, 200 mohm, 5 V, 2 V
|
||
IRLL014PBF
|
Vishay Siliconix | 类似代替 | TO-261-4 |
VISHAY IRLL014PBF. 晶体管, MOSFET, N沟道, 2.7 A, 60 V, 200 mohm, 5 V, 2 V
|
||
IRLL014PBF
|
VISHAY | 类似代替 | TO-261-4 |
VISHAY IRLL014PBF. 晶体管, MOSFET, N沟道, 2.7 A, 60 V, 200 mohm, 5 V, 2 V
|
||
|
|
Rochester | 功能相似 | SOT-223 |
FAIRCHILD SEMICONDUCTOR NDT014L 晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.12 ohm, 10 V, 1.5 V
|
||
NDT014L
|
Fairchild | 功能相似 | TO-261-4 |
FAIRCHILD SEMICONDUCTOR NDT014L 晶体管, MOSFET, N沟道, 2.8 A, 60 V, 0.12 ohm, 10 V, 1.5 V
|
||
NTF3055-100T1G
|
ON Semiconductor | 功能相似 | TO-261-4 |
ON SEMICONDUCTOR NTF3055-100T1G 晶体管, MOSFET, N沟道, 3 A, 60 V, 0.088 ohm, 10 V, 3 V
|
||
STN3NF06L
|
ST Microelectronics | 功能相似 | TO-261-4 |
STMICROELECTRONICS STN3NF06L 晶体管, MOSFET, N沟道, 4 A, 60 V, 0.07 ohm, 10 V, 2.8 V
|
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