Technical parameters/dissipated power: | 3.1W (Ta), 125W (Tc) |
|
Technical parameters/drain source voltage (Vds): | 500 V |
|
Technical parameters/Input capacitance (Ciss): | 1300pF @25V(Vds) |
|
Technical parameters/dissipated power (Max): | 3.1W (Ta), 125W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Encapsulation parameters/Encapsulation: | TO-263-3 |
|
Dimensions/Packaging: | TO-263-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: |
| |
Compliant with standards/lead standards: | lead-free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF840SPBF
|
Vishay Semiconductor | 完全替代 | D2PAK-263 |
MOSFET N-CH 500V 8A D2PAK
|
||
IRF840SPBF
|
VISHAY | 完全替代 | TO-263-3 |
MOSFET N-CH 500V 8A D2PAK
|
||
IRF840SPBF
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 500V 8A D2PAK
|
||
IRF840SPBF
|
Vishay Intertechnology | 完全替代 | D2PAK |
MOSFET N-CH 500V 8A D2PAK
|
||
IRF840STRL
|
VISHAY | 完全替代 | D2PAK |
MOSFET N-CH 500V 8A D2PAK
|
||
IRF840STRL
|
Vishay Semiconductor | 完全替代 |
MOSFET N-CH 500V 8A D2PAK
|
|||
IRF840STRL
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 500V 8A D2PAK
|
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