Technical parameters/rated power: 125 W
Technical parameters/drain source resistance: 850 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 3.1 W
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 8.00 A
Technical parameters/Input capacitance (Ciss): 1300pF @25V(Vds)
Technical parameters/rated power (Max): 3.1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 3.1W (Ta), 125W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.41 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Other/Product Lifecycle: Active
Other/Packaging Methods: Tube
Other/Minimum Packaging: 50
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF840ASTRR
|
Vishay Semiconductor | 功能相似 | 3 |
MOSFET N-CH 500V 8A D2PAK
|
||
IRF840S
|
VISHAY | 完全替代 | D2PAK-263 |
MOSFET N-CH 500V 8A D2PAK
|
||
IRF840S
|
IRF | 完全替代 |
MOSFET N-CH 500V 8A D2PAK
|
|||
IRF840S
|
Advanced Power Electronics | 完全替代 | TO-263 |
MOSFET N-CH 500V 8A D2PAK
|
||
IRF840STRLPBF
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 500V 8A D2PAK
|
||
IRF840STRLPBF
|
Vishay Semiconductor | 完全替代 | TO-252-3 |
MOSFET N-CH 500V 8A D2PAK
|
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