Technical parameters/rated voltage (DC): 500 V
Technical parameters/rated current: 8.00 A
Technical parameters/dissipated power: 3.1W (Ta), 125W (Tc)
Technical parameters/drain source voltage (Vds): 500 V
Technical parameters/Continuous drain current (Ids): 8.00 A
Technical parameters/rise time: 23.0 ns
Technical parameters/Input capacitance (Ciss): 1300pF @25V(Vds)
Technical parameters/dissipated power (Max): 3.1W (Ta), 125W (Tc)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: TO-263-3
External dimensions/length: 10.67 mm
External dimensions/width: 9.65 mm
External dimensions/height: 4.83 mm
External dimensions/packaging: TO-263-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF840STRLPBF
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 500V 8A D2PAK
|
||
IRF840STRLPBF
|
Vishay Semiconductor | 完全替代 | TO-252-3 |
MOSFET N-CH 500V 8A D2PAK
|
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