Technical parameters/rated power: | 3.1 W |
|
Technical parameters/drain source resistance: | 0.85 Ω |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 125 W |
|
Technical parameters/threshold voltage: | 4 V |
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Technical parameters/drain source voltage (Vds): | 500 V |
|
Technical parameters/Continuous drain current (Ids): | 8.00 A |
|
Technical parameters/rise time: | 23 ns |
|
Technical parameters/Input capacitance (Ciss): | 1300pF @25V(Vds) |
|
Technical parameters/descent time: | 20 ns |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 3100 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | D2PAK-263 |
|
Dimensions/Length: | 10.41 mm |
|
Dimensions/Width: | 9.65 mm |
|
Dimensions/Height: | 4.83 mm |
|
Dimensions/Packaging: | D2PAK-263 |
|
Physical parameters/operating temperature: | -55℃ ~ 150℃ |
|
Other/Packaging Methods: | Tube |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF840ASTRR
|
Vishay Semiconductor | 功能相似 | 3 |
MOSFET N-CH 500V 8A D2PAK
|
||
IRF840S
|
VISHAY | 完全替代 | D2PAK-263 |
MOSFET N-CH 500V 8A D2PAK
|
||
IRF840S
|
IRF | 完全替代 |
MOSFET N-CH 500V 8A D2PAK
|
|||
IRF840S
|
Advanced Power Electronics | 完全替代 | TO-263 |
MOSFET N-CH 500V 8A D2PAK
|
||
IRF840STRLPBF
|
Vishay Siliconix | 完全替代 | TO-263-3 |
MOSFET N-CH 500V 8A D2PAK
|
||
IRF840STRLPBF
|
Vishay Semiconductor | 完全替代 | TO-252-3 |
MOSFET N-CH 500V 8A D2PAK
|
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