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Description N 通道 MOSFET,500V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
Product QR code
Packaging D2PAK-263
Delivery time
Packaging method Tube
Standard packaging quantity 1
9.05  yuan 9.05yuan
  • Freight charges   In stock Freight rate:$13.00
  • Quantity
    Inventory(9504) Minimum order quantity(1)
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Technical parameters/rated power:

3.1 W

 

Technical parameters/drain source resistance:

0.85 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

125 W

 

Technical parameters/threshold voltage:

4 V

 

Technical parameters/drain source voltage (Vds):

500 V

 

Technical parameters/Continuous drain current (Ids):

8.00 A

 

Technical parameters/rise time:

23 ns

 

Technical parameters/Input capacitance (Ciss):

1300pF @25V(Vds)

 

Technical parameters/descent time:

20 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

3100 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

3

 

Encapsulation parameters/Encapsulation:

D2PAK-263

 

Dimensions/Length:

10.41 mm

 

Dimensions/Width:

9.65 mm

 

Dimensions/Height:

4.83 mm

 

Dimensions/Packaging:

D2PAK-263

 

Physical parameters/operating temperature:

-55℃ ~ 150℃

 

Other/Packaging Methods:

Tube

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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