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Specification parameters
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Technical parameters/rated voltage (DC):

-30.0 V

Technical parameters/rated current:

-2.00 A

Technical parameters/rated power:

500 mW

Technical parameters/number of pins:

Technical parameters/drain source resistance:

0.08 Ω

Technical parameters/polarity:

P-Channel

Technical parameters/dissipated power:

500 mW

Technical parameters/threshold voltage:

20 V

Technical parameters/Input capacitance:

298 pF

Technical parameters/gate charge:

6.20 nC

Technical parameters/drain source voltage (Vds):

30 V

Technical parameters/Leakage source breakdown voltage:

-30.0 V

Technical parameters/breakdown voltage of gate source:

±20.0 V

Technical parameters/Continuous drain current (Ids):

2.00 A

Technical parameters/rise time:

13 ns

Technical parameters/Input capacitance (Ciss):

298pF @15V(Vds)

Technical parameters/rated power (Max):

460 mW

Technical parameters/descent time:

13 ns

Technical parameters/operating temperature (Max):

150 ℃

Technical parameters/operating temperature (Min):

-55 ℃

Technical parameters/dissipated power (Max):

0.5 W

Encapsulation parameters/installation method:

Surface Mount

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

SOT-23-3

Dimensions/Length:

2.92 mm

Dimensions/Width:

1.4 mm

Dimensions/Height:

0.94 mm

Dimensions/Packaging:

SOT-23-3

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
FDN360P	Fairchild	功能相似	SOT-23-3	ON Semiconductor PowerTrench 系列 Si P沟道 MOSFET FDN360P, 2 A, Vds=30 V, 3引脚 SOT-23封装	PDF
FDN360P	Rochester	功能相似	SuperSOT	ON Semiconductor PowerTrench 系列 Si P沟道 MOSFET FDN360P, 2 A, Vds=30 V, 3引脚 SOT-23封装	PDF
FDN360P	ON Semiconductor	功能相似	SOT-23-3	ON Semiconductor PowerTrench 系列 Si P沟道 MOSFET FDN360P, 2 A, Vds=30 V, 3引脚 SOT-23封装	PDF
FDN360P	SHIKUES	功能相似	SOT-23	ON Semiconductor PowerTrench 系列 Si P沟道 MOSFET FDN360P, 2 A, Vds=30 V, 3引脚 SOT-23封装
FDN360P_NL	Fairchild	功能相似	SuperSOT	Single P-Channel PowerTrench MOSFET	PDF
IRLML5203TRPBF	International Rectifier	功能相似	SOT-23-3	P 通道功率 MOSFET 最大 7A，Infineon Infineon 分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 P 通道设备，外形可应对几乎任何板布局和热设计挑战。在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
IRLML5203TRPBF	Infineon	功能相似	SOT-23-3	P 通道功率 MOSFET 最大 7A，Infineon Infineon 分立 HEXFET® 功率 MOSFET 系列包括表面安装和引线封装的 P 通道设备，外形可应对几乎任何板布局和热设计挑战。在整个范围内，基准导通电阻减少了传导损耗，让设计人员可以提供最佳系统效率。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。	PDF

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ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643