Chip AI consultant
Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 1.25 W |
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Technical parameters/product series: | IRLML5203 |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Continuous drain current (Ids): | -3.00 A |
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Technical parameters/Input capacitance (Ciss): | 510pF @25V(Vds) |
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Technical parameters/rated power (Max): | 1.25 W |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | SOT-23-3 |
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Dimensions/Packaging: | SOT-23-3 |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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Customs information/ECCN code: | EAR99 |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDN360P
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR FDN360P 晶体管, MOSFET, P沟道, 2 A, -30 V, 80 mohm, -10 V, -1.9 V
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FDN360P
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Rochester | 功能相似 | SuperSOT |
FAIRCHILD SEMICONDUCTOR FDN360P 晶体管, MOSFET, P沟道, 2 A, -30 V, 80 mohm, -10 V, -1.9 V
|
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FDN360P
|
ON Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR FDN360P 晶体管, MOSFET, P沟道, 2 A, -30 V, 80 mohm, -10 V, -1.9 V
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FDN360P
|
SHIKUES | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR FDN360P 晶体管, MOSFET, P沟道, 2 A, -30 V, 80 mohm, -10 V, -1.9 V
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SHIKUES | 完全替代 | SOT-23 |
INFINEON IRLML5203 晶体管, MOSFET, P沟道, 3 A, -30 V, 98 mohm, -10 V
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KUU | 完全替代 | SOT-23 |
INFINEON IRLML5203 晶体管, MOSFET, P沟道, 3 A, -30 V, 98 mohm, -10 V
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UMW | 完全替代 | SOT-23 |
INFINEON IRLML5203 晶体管, MOSFET, P沟道, 3 A, -30 V, 98 mohm, -10 V
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IRLML5203
|
IRF | 完全替代 |
INFINEON IRLML5203 晶体管, MOSFET, P沟道, 3 A, -30 V, 98 mohm, -10 V
|
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IRLML5203GTRPBF
|
Infineon | 类似代替 | SOT-23-3 |
HEXFET® N 通道功率 MOSFET 最大 50A，Infineon HEXFET® 电源 MOSFET 具有各种坚固的单 N 通道设备，用于为音频、消费电子产品、电动机控制和照明及家用电器提供交流到直流和直流到直流电源。 ### MOSFET 晶体管，Infineon (IR) Infineon 全面的坚固单和双 N 通道和 P 通道设备组合提供快速切换速度，且可满足各种电源需求。 应用范围从交流-直流和直流-直流电源到音频和消费电子产品，从电动机控制到照明和家用电器。
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RTR025P02TL
|
ROHM Semiconductor | 功能相似 | SOT-23-3 |
P-沟道 1 W -20 V 160 mOhm 表面贴装 2.5 V 驱动 MosFet - TSMT -3
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