Technical parameters/polarity: P-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 2A
Encapsulation parameters/Encapsulation: SuperSOT
External dimensions/packaging: SuperSOT
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDN360P
|
Fairchild | 功能相似 | SOT-23-3 |
ON Semiconductor PowerTrench 系列 Si P沟道 MOSFET FDN360P, 2 A, Vds=30 V, 3引脚 SOT-23封装
|
||
FDN360P
|
Rochester | 功能相似 | SuperSOT |
ON Semiconductor PowerTrench 系列 Si P沟道 MOSFET FDN360P, 2 A, Vds=30 V, 3引脚 SOT-23封装
|
||
FDN360P
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON Semiconductor PowerTrench 系列 Si P沟道 MOSFET FDN360P, 2 A, Vds=30 V, 3引脚 SOT-23封装
|
||
FDN360P
|
SHIKUES | 功能相似 | SOT-23 |
ON Semiconductor PowerTrench 系列 Si P沟道 MOSFET FDN360P, 2 A, Vds=30 V, 3引脚 SOT-23封装
|
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