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Specification parameters
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Technical parameters/rated voltage (DC):

30.0 V

Technical parameters/rated current:

55.0 A

Technical parameters/number of pins:

Technical parameters/drain source resistance:

0.0105 Ω

Technical parameters/polarity:

N-Channel

Technical parameters/dissipated power:

60 mW

Technical parameters/threshold voltage:

1.4 V

Technical parameters/Input capacitance:

1.20 nF

Technical parameters/gate charge:

21.0 nC

Technical parameters/drain source voltage (Vds):

30 V

Technical parameters/Leakage source breakdown voltage:

30.0 V

Technical parameters/breakdown voltage of gate source:

±20.0 V

Technical parameters/Continuous drain current (Ids):

55.0 A

Technical parameters/rise time:

6 ns

Technical parameters/Input capacitance (Ciss):

1200pF @15V(Vds)

Technical parameters/rated power (Max):

1.3 W

Technical parameters/descent time:

12 ns

Technical parameters/operating temperature (Max):

150 ℃

Technical parameters/operating temperature (Min):

-55 ℃

Technical parameters/dissipated power (Max):

60W (Ta)

Encapsulation parameters/installation method:

Surface Mount

Package parameters/number of pins:

Encapsulation parameters/Encapsulation:

TO-252-3

Dimensions/Length:

6.73 mm

Dimensions/Width:

6.22 mm

Dimensions/Height:

2.39 mm

Dimensions/Packaging:

TO-252-3

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

Other/Product Lifecycle:

Active

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ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
Address: Room 611, Block A, Aerospace Building, No. 4019, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China
Tel: +86-0755-82866643