Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 40.0 A
Technical parameters/number of channels: 1
Technical parameters/drain source resistance: 11.5 mΩ
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 80 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±16.0 V
Technical parameters/Continuous drain current (Ids): 40.0 A
Technical parameters/rise time: 156 ns
Technical parameters/Input capacitance (Ciss): 1650pF @25V(Vds)
Technical parameters/descent time: 28 ns
Technical parameters/dissipated power (Max): 80W (Tc)
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-252-3
External dimensions/width: 6.2 mm
External dimensions/packaging: TO-252-3
Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDD6680AS
|
Fairchild | 功能相似 | TO-252-3 |
PowerTrench® SyncFET™ MOSFET，Fairchild Semiconductor 设计用于尽量减少功率转换的损耗，同时保持极佳的切换性能 高性能通道技术，RDS（接通）极低 SyncFET™ 得益于高效的肖特基主体二极管 应用：同步整流直流-直流转换器、电动机驱动器、网络负载点低侧开关 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
|
||
FDD6680AS
|
ON Semiconductor | 功能相似 | TO-252-3 |
PowerTrench® SyncFET™ MOSFET，Fairchild Semiconductor 设计用于尽量减少功率转换的损耗，同时保持极佳的切换性能 高性能通道技术，RDS（接通）极低 SyncFET™ 得益于高效的肖特基主体二极管 应用：同步整流直流-直流转换器、电动机驱动器、网络负载点低侧开关 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。
|
||
STD40NF3LL
|
ST Microelectronics | 功能相似 | DPAK |
N沟道30V - 0.0095欧姆 - 40A DPAK低栅电荷的STripFET功率MOSFET N-CHANNEL 30V - 0.0095 ohm - 40A DPAK LOW GATE CHARGE STripFET POWER MOSFET
|
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