Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 40A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DPAK
External dimensions/packaging: DPAK
Other/Product Lifecycle: Unknown
Compliant with standards/RoHS standards: RoHS Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
STD40NF3LLT4
|
ST Microelectronics | 功能相似 | TO-252-3 |
N沟道30V - 0.009ohm - 40A - DPAK低栅极电荷的STripFET TM II功率MOSFET N-channel 30V - 0.009ohm - 40A - DPAK Low gate charge STripFET TM II Power MOSFET
|
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