Technical parameters/polarity: N-CH
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 55A
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: DPAK
External dimensions/packaging: DPAK
Other/Product Lifecycle: Obsolete
Compliant with standards/RoHS standards: RoHS Compliant
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDD6680AS
|
Fairchild | 功能相似 | TO-252-3 |
ON Semiconductor PowerTrench, SyncFET 系列 Si N沟道 MOSFET FDD6680AS, 55 A, Vds=30 V, 3引脚 DPAK (TO-252)封装
|
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FDD6680AS
|
ON Semiconductor | 功能相似 | TO-252-3 |
ON Semiconductor PowerTrench, SyncFET 系列 Si N沟道 MOSFET FDD6680AS, 55 A, Vds=30 V, 3引脚 DPAK (TO-252)封装
|
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