Technical parameters/minimum current amplification factor (hFE): | 125 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 250 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-236 |
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Dimensions/Length: | 3 mm |
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Dimensions/Width: | 1.4 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | TO-236 |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC856,215
|
NXP | 功能相似 | SOT-23-3 |
Nexperia BC856,215 , PNP 晶体管, 100 mA, Vce=65 V, HFE:125, 100 MHz, 3引脚 SOT-23 (TO-236AB)封装
|
||
BC856A
|
AUK Semiconductor | 功能相似 | SOT-23 |
Transistor: PNP; bipolar; 80V; 100mA; 0.25W(1/4W); SOT23
|
||
BC856A
|
Multicomp | 功能相似 | SOT-23 |
Transistor: PNP; bipolar; 80V; 100mA; 0.25W(1/4W); SOT23
|
||
|
BC856A
|
Rectron | 功能相似 | SOT-23 |
Transistor: PNP; bipolar; 80V; 100mA; 0.25W(1/4W); SOT23
|
||
|
BC856A
|
Kexin | 功能相似 |
Transistor: PNP; bipolar; 80V; 100mA; 0.25W(1/4W); SOT23
|
|||
BC856A
|
Infineon | 功能相似 | SOT-23 |
Transistor: PNP; bipolar; 80V; 100mA; 0.25W(1/4W); SOT23
|
||
|
|
先科ST | 功能相似 | SOT-23-3 |
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1Element, PNP, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
||
BC856B
|
Nexperia | 功能相似 | TO-236 |
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1Element, PNP, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
||
|
BC856B
|
AUK Semiconductor | 功能相似 | SOT-23 |
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1Element, PNP, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
||
|
BC856B
|
Infineon | 功能相似 | SOT-23 |
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1Element, PNP, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
||
BC856B
|
ChendaHang | 功能相似 |
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1Element, PNP, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
|||
BC856B
|
KEC | 功能相似 | SOT-23 |
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1Element, PNP, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
||
BC856B
|
CJ | 功能相似 | SOT-23-3 |
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1Element, PNP, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
||
BC856BMTF
|
Fairchild | 功能相似 | SOT-23-3 |
小信号 PNP 晶体管，60 至 160V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
||
|
|
AUK Semiconductor | 功能相似 | SOT-23 |
Transistor: PNP; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
||
BC857C
|
CJ | 功能相似 |
Transistor: PNP; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
|||
BC857C
|
ChendaHang | 功能相似 |
Transistor: PNP; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
|||
BC857C
|
CDIL | 功能相似 |
Transistor: PNP; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
|||
BC857C
|
Taiwan Semiconductor | 功能相似 | SOT-23 |
Transistor: PNP; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
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