Technical parameters/minimum current amplification factor (hFE): | 220 |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | -65 ℃ |
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Technical parameters/dissipated power (Max): | 250 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 3 |
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Encapsulation parameters/Encapsulation: | TO-236 |
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Dimensions/Length: | 3 mm |
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Dimensions/Width: | 1.4 mm |
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Dimensions/Height: | 1 mm |
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Dimensions/Packaging: | TO-236 |
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Other/Product Lifecycle: | Active |
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Compliant with standards/RoHS standards: |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC856B-7-F
|
Multicomp | 功能相似 | SOT-23 |
BC856B 系列 65 V 100 mA 表面贴装 PNP 通用 晶体管 - SOT-23
|
||
BC856BLT3G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
PNP 晶体管，ON Semiconductor 这些 ON Semiconductor 双极晶体管可放大模拟或数字信号。 它们还可切换直流或用作振荡器。 ### 标准 Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. ### 双极性晶体管，On Semiconductor ON Semiconductor 的各种双极晶体管，包括以下类别： 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声，双匹配和复杂的双极晶体管
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