Technical parameters/number of pins: 3
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 250 mW
Technical parameters/Maximum current amplification factor (hFE): 250
Technical parameters/DC current gain (hFE): 125
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -65 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/packaging: SOT-23
Physical parameters/operating temperature: -65℃ ~ 150℃
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC856A
|
AUK Semiconductor | 类似代替 | SOT-23 |
NXP BC856A 单晶体管 双极, 通用, PNP, 65 V, 250 mW, 100 mA, 125 hFE
|
||
BC856A
|
Multicomp | 类似代替 | SOT-23 |
NXP BC856A 单晶体管 双极, 通用, PNP, 65 V, 250 mW, 100 mA, 125 hFE
|
||
BC856A
|
Rectron | 类似代替 | SOT-23 |
NXP BC856A 单晶体管 双极, 通用, PNP, 65 V, 250 mW, 100 mA, 125 hFE
|
||
BC856A
|
Kexin | 类似代替 |
NXP BC856A 单晶体管 双极, 通用, PNP, 65 V, 250 mW, 100 mA, 125 hFE
|
|||
BC856A
|
Infineon | 类似代替 | SOT-23 |
NXP BC856A 单晶体管 双极, 通用, PNP, 65 V, 250 mW, 100 mA, 125 hFE
|
||
BC856A,215
|
NXP | 类似代替 | SOT-23-3 |
Nexperia BC856A,215 , PNP 晶体管, 100 mA, Vce=65 V, HFE:125, 3引脚 SOT-23封装
|
||
BC856A-7-F
|
Multicomp | 功能相似 | SOT-23 |
三极管
|
||
BC856A-7-F
|
Diodes | 功能相似 | SOT-23-3 |
三极管
|
||
BC856A-7-F
|
Diodes Zetex | 功能相似 | SOT-23-3 |
三极管
|
||
BC856A-T
|
Rectron Semiconductor | 功能相似 | SOT-23 |
Transistor
|
||
BC856ALT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC856ALT1G 单晶体管 双极, 通用, PNP, -65 V, 100 MHz, 225 mW, -100 mA, 100 hFE
|
||
|
|
先科ST | 功能相似 | SOT-23-3 |
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1Element, PNP, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
||
BC856B
|
Nexperia | 功能相似 | TO-236 |
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1Element, PNP, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
||
BC856B
|
AUK Semiconductor | 功能相似 | SOT-23 |
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1Element, PNP, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
||
BC856B
|
Infineon | 功能相似 | SOT-23 |
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1Element, PNP, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
||
BC856B
|
ChendaHang | 功能相似 |
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1Element, PNP, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
|||
BC856B
|
KEC | 功能相似 | SOT-23 |
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1Element, PNP, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
||
BC856B
|
CJ | 功能相似 | SOT-23-3 |
Small Signal Bipolar Transistor, 0.1A I(C), 65V V(BR)CEO, 1Element, PNP, Silicon, TO-236, ROHS COMPLIANT, PLASTIC PACKAGE-3
|
||
|
|
AUK Semiconductor | 功能相似 | SOT-23 |
Transistor: PNP; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
||
BC857C
|
CJ | 功能相似 |
Transistor: PNP; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
|||
BC857C
|
ChendaHang | 功能相似 |
Transistor: PNP; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
|||
BC857C
|
CDIL | 功能相似 |
Transistor: PNP; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
|||
BC857C
|
Taiwan Semiconductor | 功能相似 | SOT-23 |
Transistor: PNP; bipolar; 50V; 100mA; 0.25W(1/4W); SOT23
|
||
BC857CE6327
|
Infineon | 功能相似 | SOT-23 |
SOT-23 PNP 45V 0.1A
|
||
LBC856AWT1G
|
Leshan Radio | 功能相似 | SC-70 |
General Purpose Transistors PNP Silicon
|
||
SBC856ALT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
PNP 晶体管,ON Semiconductor 这些 ON Semiconductor 双极晶体管可放大模拟或数字信号。 它们还可切换直流或用作振荡器。 ### 标准 Manufacturer Part Nos with S or NSV prefix are automotive qualified to AEC-Q101 standard. ### 双极性晶体管,On Semiconductor ON Semiconductor 的各种双极晶体管,包括以下类别: 小信号晶体管 通用晶体管 双 NPN 和 PNP 晶体管 功率晶体管 高电压晶体管 射频双极晶体管 低噪声,双匹配和复杂的双极晶体管
|
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