Technical parameters/frequency: 150 MHz
Technical parameters/rated voltage (DC): -65.0 V
Technical parameters/rated current: -100 mA
Technical parameters/number of pins: 3
Technical parameters/polarity: PNP, P-Channel
Technical parameters/dissipated power: 310 mW
Technical parameters/breakdown voltage (collector emitter): 65 V
Technical parameters/maximum allowable collector current: 0.1A
Technical parameters/minimum current amplification factor (hFE): 200 @2mA, 5V
Technical parameters/rated power (Max): 310 mW
Technical parameters/DC current gain (hFE): 200
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/dissipated power (Max): 310 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.97 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/06/15
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
BC856ALT1G
|
ON Semiconductor | 功能相似 | SOT-23-3 |
ON SEMICONDUCTOR BC856ALT1G 单晶体管 双极, 通用, PNP, -65 V, 100 MHz, 225 mW, -100 mA, 100 hFE
|
||
BC856BMTF
|
Fairchild | 类似代替 | SOT-23-3 |
小信号 PNP 晶体管，60 至 160V，Fairchild Semiconductor ### 双极晶体管，Fairchild Semiconductor 双极性结点晶体管 (BJT) 板系列提供完整的解决方案，用于满足各种电路应用需求。 创新的封装设计用于提供最小尺寸、最高可靠性和最大热性能。
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review