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Model MRF21045LR3
Description 2170MHz, 45W, 28V Lateral N-Channel RF Power MOSFET
Product QR code
Brand: Freescale
Packaging NI-400
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(7890) Minimum order quantity(1)
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Technical parameters/halogen-free state:

Halogen Free

 

Technical parameters/output power:

10.0 W

 

Technical parameters/gain:

15.0 dB

 

Encapsulation parameters/installation method:

Flange

 

Encapsulation parameters/Encapsulation:

NI-400

 

Dimensions/Packaging:

NI-400

 

Other/Product Lifecycle:

Obsolete

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
MRF8S21100HSR3 MRF8S21100HSR3 NXP 功能相似 NI-780S
RF Power Transistor,2110 to 2170MHz, 100W, Typ Gain in dB is 18.3 @ 2170MHz, 28V, LDMOS, SOT1793
PDF
MRF8S21100HSR3 MRF8S21100HSR3 Freescale 功能相似 NI-780S
RF Power Transistor,2110 to 2170MHz, 100W, Typ Gain in dB is 18.3 @ 2170MHz, 28V, LDMOS, SOT1793
PDF
MRF8S21120HR3 MRF8S21120HR3 Freescale 功能相似 NI-780
W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170MHz, 28W Avg., 28V
PDF
MRF8S21120HR3 MRF8S21120HR3 NXP 功能相似 NI-780H-2L
W-CDMA, LTE Lateral N-Channel RF Power MOSFET, 2110-2170MHz, 28W Avg., 28V
PDF
MRF8S21120HSR3 MRF8S21120HSR3 NXP 功能相似 NI-780S
RF Power Transistor,2110 to 2170MHz, 107W, Typ Gain in dB is 17.6 @ 2170MHz, 28V, LDMOS, SOT1793
PDF
MRF8S21120HSR3 MRF8S21120HSR3 Freescale 功能相似 NI-780S
RF Power Transistor,2110 to 2170MHz, 107W, Typ Gain in dB is 17.6 @ 2170MHz, 28V, LDMOS, SOT1793
PDF

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