Technical parameters/rated voltage (DC): | 20.0 V |
|
Technical parameters/rated current: | 8.70 A |
|
Technical parameters/drain source resistance: | 22.0 mΩ (max) |
|
Technical parameters/polarity: | N-Channel |
|
Technical parameters/dissipated power: | 2.5 W |
|
Technical parameters/product series: | IRF7401 |
|
Technical parameters/drain source voltage (Vds): | 20 V |
|
Technical parameters/Leakage source breakdown voltage: | 20.0V (min) |
|
Technical parameters/Continuous drain current (Ids): | 8.70 A |
|
Technical parameters/rise time: | 72.0 ns |
|
Technical parameters/Input capacitance (Ciss): | 1600pF @15V(Vds) |
|
Technical parameters/rated power (Max): | 2.5 W |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 8 |
|
Encapsulation parameters/Encapsulation: | SOIC-8 |
|
Dimensions/Packaging: | SOIC-8 |
|
Other/Product Lifecycle: | Active |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | Non-Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
NDS8425
|
ON Semiconductor | 功能相似 | SOIC-8 |
PowerTrench® N 通道 MOSFET,高达 9.9A,Fairchild Semiconductor ### MOSFET 晶体管,Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合,包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性,以减少结电容和反向恢复电荷,无需额外外部元件即可保持系统启动和运行更长时间。
|
||
NDS8425
|
Fairchild | 功能相似 | SOIC-8 |
PowerTrench® N 通道 MOSFET,高达 9.9A,Fairchild Semiconductor ### MOSFET 晶体管,Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合,包括高电压 (>250V) 低电压 (Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性,以减少结电容和反向恢复电荷,无需额外外部元件即可保持系统启动和运行更长时间。
|
||
SI4426DY-T1-E3
|
VISHAY | 功能相似 | SOIC-8 |
SOIC-8 N-CH 20V 6.5A 25mΩ
|
||
SI4426DY-T1-E3
|
Vishay Siliconix | 功能相似 | SO-8 |
SOIC-8 N-CH 20V 6.5A 25mΩ
|
||
STS6NF20V
|
ST Microelectronics | 功能相似 | SOIC-8 |
STMICROELECTRONICS STS6NF20V 晶体管, MOSFET, N沟道, 6 A, 20 V, 45 mohm, 2.7 V, 600 mV
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review