Technical parameters/number of pins: | 8 |
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Technical parameters/drain source resistance: | 0.045 Ω |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 2.5 W |
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Technical parameters/threshold voltage: | 600 mV |
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Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/Leakage source breakdown voltage: | 20.0 V |
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Technical parameters/breakdown voltage of gate source: | ±12.0 V |
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Technical parameters/Continuous drain current (Ids): | 6.00 A |
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Technical parameters/rise time: | 33 ns |
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Technical parameters/Input capacitance (Ciss): | 460pF @15V(Vds) |
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Technical parameters/rated power (Max): | 2.5 W |
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Technical parameters/descent time: | 10 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2500 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Length: | 5 mm |
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Dimensions/Width: | 4 mm |
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Dimensions/Height: | 1.25 mm |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Manufacturing Applications: | Computers & Computer Peripherals, Computers and Computer Peripherals, Industrial, Power Management, Communication and Networking, Industrial, Power Management, Communications& Networking |
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Compliant with standards/RoHS standar Alternative material
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