Technical parameters/dissipated power: 1.5W (Ta)
Technical parameters/drain source voltage (Vds): 20 V
Technical parameters/dissipated power (Max): 1.5W (Ta)
Encapsulation parameters/installation method: Surface Mount
Encapsulation parameters/Encapsulation: SO-8
External dimensions/packaging: SO-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7401
|
International Rectifier | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 20V 8.7A 8Pin SOIC
|
||
IRF7401
|
ADI | 功能相似 |
Trans MOSFET N-CH 20V 8.7A 8Pin SOIC
|
|||
IRF7401TRPBF
|
International Rectifier | 功能相似 | SOIC-8 |
20V,8.7A,N沟道功率MOSFET
|
||
SI4426DY
|
Vishay Semiconductor | 功能相似 | SO |
MOSFET 20V 8.5A 2.5W
|
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