Technical parameters/drain source resistance: | 25.0 mΩ |
|
Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 2.5 W |
|
Technical parameters/drain source voltage (Vds): | 20 V |
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Technical parameters/Leakage source breakdown voltage: | 20.0 V |
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Technical parameters/breakdown voltage of gate source: | ±12.0 V |
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Technical parameters/Continuous drain current (Ids): | -8.50 A to 8.50 A |
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Technical parameters/rise time: | 40 ns |
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Technical parameters/rated power (Max): | 1.5 W |
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Technical parameters/descent time: | 40 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 2500 mW |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Other/Minimum Packaging: | 2500 |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
IRF7401
|
International Rectifier | 功能相似 | SOIC-8 |
Trans MOSFET N-CH 20V 8.7A 8Pin SOIC
|
||
IRF7401
|
ADI | 功能相似 |
Trans MOSFET N-CH 20V 8.7A 8Pin SOIC
|
|||
IRF7401TRPBF
|
International Rectifier | 功能相似 | SOIC-8 |
20V,8.7A,N沟道功率MOSFET
|
||
SI4426DY
|
Vishay Semiconductor | 功能相似 | SO |
MOSFET 20V 8.5A 2.5W
|
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