Technical parameters/drain source resistance: | 0.005 Ω |
|
Technical parameters/dissipated power: | 375 W |
|
Technical parameters/drain source voltage (Vds): | 40 V |
|
Technical parameters/rise time: | 290 ns |
|
Technical parameters/Input capacitance (Ciss): | 11300pF @25V(Vds) |
|
Technical parameters/descent time: | 35 ns |
|
Technical parameters/operating temperature (Max): | 175 ℃ |
|
Technical parameters/operating temperature (Min): | -55 ℃ |
|
Technical parameters/dissipated power (Max): | 15W (Ta), 375W (Tc) |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | TO-263-3 |
|
Dimensions/Length: | 10.414 mm |
|
Dimensions/Width: | 9.65 mm |
|
Dimensions/Height: | 4.83 mm |
|
Dimensions/Packaging: | TO-263-3 |
|
Physical parameters/operating temperature: | -55℃ ~ 175℃ |
|
Other/Product Lifecycle: | Active |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Lead Free |
|
Compliant with standard/REACH SVHC version: | 2014/12/17 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SUB75P03-07
|
Vishay Semiconductor | 功能相似 | TO-263 |
MOSFET 30V 75A 187W
|
||
SUB75P03-07-E3
|
Vishay Siliconix | 类似代替 | TO-263-3 |
MOSFET; P-Ch; VDSS -30V; RDS(ON) 0.0055Ω; ID -75A; TO-263; PD 187W; VGS +/-20V; gFS 20
|
||
SUB75P03-07-E3
|
Vishay Semiconductor | 类似代替 | TO-263 |
MOSFET; P-Ch; VDSS -30V; RDS(ON) 0.0055Ω; ID -75A; TO-263; PD 187W; VGS +/-20V; gFS 20
|
||
|
|
Vishay Intertechnology | 类似代替 | TO-252-3 |
MOSFET; P-Ch; VDSS -30V; RDS(ON) 0.0055Ω; ID -75A; TO-263; PD 187W; VGS +/-20V; gFS 20
|
||
SUB75P03-08
|
Vishay Siliconix | 功能相似 | TO-263-3 |
Transistor
|
||
SUB75P03-08
|
Vishay Semiconductor | 功能相似 | TO-263 |
Transistor
|
||
SUB75P03-08
|
VISHAY | 功能相似 | TO-263 |
Transistor
|
||
SUB75P03-08
|
Visay | 功能相似 |
Transistor
|
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