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Model SUB75P03-07-E3

Description Power Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET

Brand: Vishay Intertechnology

Packaging TO-252-3

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of channels: 1

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-252-3

External dimensions/packaging: TO-252-3

Other/Product Lifecycle: Obsolete

Other/Packaging Methods: Tape & Reel (TR)

Compliant with standards/RoHS standards: Non-Compliant

Alternative material

Model	Brand	Similarity	Encapsulation	Introduction	Data manual
SUM110P04-05-E3	Vishay Siliconix	类似代替	TO-263-3	MOSFET, P-Ch, Vds -40V, Vgs +/- 20V, Rds(on) 5mohm, Id 110A, TO-263, Pd 375W	PDF
SUM110P04-05-E3	VISHAY	类似代替	TO-263-3	MOSFET, P-Ch, Vds -40V, Vgs +/- 20V, Rds(on) 5mohm, Id 110A, TO-263, Pd 375W	PDF
SUM110P04-05-E3	Vishay Intertechnology	类似代替		MOSFET, P-Ch, Vds -40V, Vgs +/- 20V, Rds(on) 5mohm, Id 110A, TO-263, Pd 375W	PDF

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