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Model SUB75P03-07-E3
Description MOSFET; P-Ch; VDSS -30V; RDS(ON) 0.0055Ω; ID -75A; TO-263; PD 187W; VGS +/-20V; gFS 20
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Brand: Vishay Siliconix
Packaging TO-263-3
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Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(6167) Minimum order quantity(1)
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Technical parameters/drain source resistance: 0.0055 Ω

Technical parameters/dissipated power: 187 W

Technical parameters/drain source voltage (Vds): 30 V

Technical parameters/Input capacitance (Ciss): 9000pF @25V(Vds)

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Technical parameters/dissipated power (Max): 3.75W (Ta), 187W (Tc)

Encapsulation parameters/installation method: Surface Mount

Encapsulation parameters/Encapsulation: TO-263-3

External dimensions/length: 10.67 mm

External dimensions/width: 9.65 mm

External dimensions/height: 4.83 mm

External dimensions/packaging: TO-263-3

Physical parameters/operating temperature: -55℃ ~ 175℃ (TJ)

Other/Product Lifecycle: Obsolete

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SUM110P04-05-E3 SUM110P04-05-E3 Vishay Siliconix 类似代替 TO-263-3
MOSFET, P-Ch, Vds -40V, Vgs +/- 20V, Rds(on) 5mohm, Id 110A, TO-263, Pd 375W
PDF
SUM110P04-05-E3 SUM110P04-05-E3 VISHAY 类似代替 TO-263-3
MOSFET, P-Ch, Vds -40V, Vgs +/- 20V, Rds(on) 5mohm, Id 110A, TO-263, Pd 375W
PDF
SUM110P04-05-E3 SUM110P04-05-E3 Vishay Intertechnology 类似代替
MOSFET, P-Ch, Vds -40V, Vgs +/- 20V, Rds(on) 5mohm, Id 110A, TO-263, Pd 375W
PDF

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