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Model SUB75P03-07-E3
Description PChannel 30-V (D-S) 175 ° C MOSFET P-Channel 30-V (D-S) 175 ° C MOSFET
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Brand: Vishay Semiconductor
Packaging TO-263
Delivery time
Packaging method Tube
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4050) Minimum order quantity(1)
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Technical parameters/rated voltage (DC): -30.0 V

Technical parameters/drain source resistance: 0.0055 Ω

Technical parameters/polarity: P-Channel

Technical parameters/dissipated power: 187 W

Technical parameters/breakdown voltage of gate source: ±20.0 V

Technical parameters/Continuous drain current (Ids): 75.0 A

Technical parameters/operating temperature (Max): 175 ℃

Technical parameters/operating temperature (Min): -55 ℃

Encapsulation parameters/installation method: Through Hole

Encapsulation parameters/Encapsulation: TO-263

External dimensions/packaging: TO-263

Other/Packaging Methods: Tube

Compliant with standards/RoHS standards: RoHS Compliant

Compliant with standards/lead standards: Lead Free

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
SUM110P04-05-E3 SUM110P04-05-E3 Vishay Siliconix 类似代替 TO-263-3
MOSFET, P-Ch, Vds -40V, Vgs +/- 20V, Rds(on) 5mohm, Id 110A, TO-263, Pd 375W
PDF
SUM110P04-05-E3 SUM110P04-05-E3 VISHAY 类似代替 TO-263-3
MOSFET, P-Ch, Vds -40V, Vgs +/- 20V, Rds(on) 5mohm, Id 110A, TO-263, Pd 375W
PDF
SUM110P04-05-E3 SUM110P04-05-E3 Vishay Intertechnology 类似代替
MOSFET, P-Ch, Vds -40V, Vgs +/- 20V, Rds(on) 5mohm, Id 110A, TO-263, Pd 375W
PDF

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