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Model PHK12NQ03LT,518

Description PHK 系列 30 V 14 mΩ 2.5 W N沟道 TrenchMOS 逻辑电平 FET - SOT-96-1

Brand: NXP

Packaging SOIC-8

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/drain source resistance:	0.0089 Ω
Technical parameters/polarity:	N-Channel
Technical parameters/dissipated power:	2.5 W
Technical parameters/threshold voltage:	2 V
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Continuous drain current (Ids):	11.8 A
Technical parameters/rise time:	11.7 ns
Technical parameters/Input capacitance (Ciss):	1335pF @16V(Vds)
Technical parameters/rated power (Max):	2.5 W
Technical parameters/descent time:	19 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	2500 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	SOIC-8
Dimensions/Length:	5 mm
Dimensions/Width:	4 mm
Dimensions/Height:	1.45 mm
Dimensions/Packaging:	SOIC-8
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with standard/REACH SVHC version:	2015/12/17

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