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Model PHK12NQ03LT
Description N沟道的TrenchMOS ？逻辑电平FET N-channel TrenchMOS?? logic level FET
Product QR code
Brand: NXP
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
0yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(4750) Minimum order quantity(1)
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Technical parameters/drain source resistance:

0.014 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

2.5 W

 

Technical parameters/threshold voltage:

2 V

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Continuous drain current (Ids):

11.8 A

 

Technical parameters/Input capacitance (Ciss):

1335pF @16V(Vds)

 

Technical parameters/rated power (Max):

2.5 W

 

Technical parameters/operating temperature (Max):

150 ℃

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Packaging:

SOIC-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

Compliant with standard/REACH SVHC version:

2015/12/17

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
IRF7413TRPBF IRF7413TRPBF International Rectifier 功能相似 SOIC-8
INFINEON IRF7413TRPBF 晶体管, MOSFET, N沟道, 13 A, 30 V, 0.011 ohm, 10 V, 3 V
PDF
PHK12NQ03LT,518 PHK12NQ03LT,518 NXP 类似代替 SOIC-8
PHK 系列 30 V 14 mΩ 2.5 W N沟道 TrenchMOS 逻辑电平 FET - SOT-96-1
PDF
PHK12NQ03LT,518 PHK12NQ03LT,518 Nexperia 类似代替 SOIC-8
PHK 系列 30 V 14 mΩ 2.5 W N沟道 TrenchMOS 逻辑电平 FET - SOT-96-1
PDF

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