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Model FDS6612A
Description FAIRCHILD SEMICONDUCTOR FDS6612A 晶体管, MOSFET, N沟道, 8.4 A, 30 V, 0.019 ohm, 10 V, 1.9 V
Product QR code
Brand: Fairchild
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.77  yuan 1.77yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(9847) Minimum order quantity(1)
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Technical parameters/rated voltage (DC):

30.0 V

 

Technical parameters/rated current:

8.40 A

 

Technical parameters/number of pins:

8

 

Technical parameters/drain source resistance:

0.019 Ω

 

Technical parameters/polarity:

N-Channel

 

Technical parameters/dissipated power:

2.5 W

 

Technical parameters/threshold voltage:

1.9 V

 

Technical parameters/Input capacitance:

560 pF

 

Technical parameters/gate charge:

5.40 nC

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Leakage source breakdown voltage:

30.0 V

 

Technical parameters/breakdown voltage of gate source:

±20.0 V

 

Technical parameters/Continuous drain current (Ids):

8.40 A

 

Technical parameters/rise time:

5 ns

 

Technical parameters/Input capacitance (Ciss):

560pF @15V(Vds)

 

Technical parameters/rated power (Max):

1 W

 

Technical parameters/descent time:

3 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

2.5W (Ta)

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Packaging:

SOIC-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Unknown

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

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