Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 8.50 A
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/product series: IRF7403
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/Continuous drain current (Ids): 8.50 A
Technical parameters/rise time: 37.0 ns
Technical parameters/Input capacitance (Ciss): 1200pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/packaging: SOIC-8
Other/Product Lifecycle: Active
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6612A
|
Fairchild | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS6612A 晶体管, MOSFET, N沟道, 8.4 A, 30 V, 0.019 ohm, 10 V, 1.9 V
|
||
FDS6612A
|
ON Semiconductor | 功能相似 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS6612A 晶体管, MOSFET, N沟道, 8.4 A, 30 V, 0.019 ohm, 10 V, 1.9 V
|
||
IRF7416PBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7416PBF. 晶体管, MOSFET, P沟道, -10 A, -30 V, 20 mohm, 10 V, -1 V
|
||
IRF7416PBF
|
International Rectifier | 类似代替 | SOIC-8 |
INFINEON IRF7416PBF. 晶体管, MOSFET, P沟道, -10 A, -30 V, 20 mohm, 10 V, -1 V
|
||
IRF7416TRPBF
|
Infineon | 类似代替 | SOIC-8 |
INFINEON IRF7416TRPBF 场效应管, MOSFET, P沟道, 10A
|
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