Technical parameters/rated voltage (DC): | 30.0 V |
|
Technical parameters/rated current: | 7.30 A |
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Technical parameters/drain source resistance: | 28.0 mΩ |
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Technical parameters/polarity: | N-Channel |
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Technical parameters/dissipated power: | 2.5W (Ta) |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/Leakage source breakdown voltage: | 30.0 V |
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Technical parameters/Continuous drain current (Ids): | 7.30 A |
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Technical parameters/Input capacitance (Ciss): | 830pF @15V(Vds) |
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Technical parameters/rated power (Max): | 1 W |
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Technical parameters/dissipated power (Max): | 2.5W (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 8 |
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Encapsulation parameters/Encapsulation: | SOIC-8 |
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Dimensions/Packaging: | SOIC-8 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
FDS6612A
|
Fairchild | 类似代替 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS6612A 晶体管, MOSFET, N沟道, 8.4 A, 30 V, 0.019 ohm, 10 V, 1.9 V
|
||
FDS6612A
|
ON Semiconductor | 类似代替 | SOIC-8 |
FAIRCHILD SEMICONDUCTOR FDS6612A 晶体管, MOSFET, N沟道, 8.4 A, 30 V, 0.019 ohm, 10 V, 1.9 V
|
||
FDS6614A
|
Fairchild | 类似代替 | SOIC-8 |
N沟道逻辑电平的PowerTrench MOSFET N-Channel Logic Level PowerTrench MOSFET
|
||
|
|
Rochester | 类似代替 | SOIC |
FAIRCHILD SEMICONDUCTOR FDS6630A 晶体管, MOSFET, N沟道, 6.5 A, 30 V, 38 mohm, 10 V, 1.7 V
|
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