Technical parameters/rated voltage (DC): 30.0 V
Technical parameters/rated current: 12.0 A
Technical parameters/number of channels: 1
Technical parameters/number of pins: 8
Technical parameters/drain source resistance: 0.008 Ω
Technical parameters/polarity: N-Channel
Technical parameters/dissipated power: 2.5 W
Technical parameters/threshold voltage: 1 V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30.0 V
Technical parameters/breakdown voltage of gate source: ±16.0 V
Technical parameters/Continuous drain current (Ids): 12.0 A
Technical parameters/rise time: 90 ns
Technical parameters/Input capacitance (Ciss): 2400pF @25V(Vds)
Technical parameters/rated power (Max): 2.5 W
Technical parameters/descent time: 35 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 2500 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.25 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: 150℃ (TJ)
Other/Product Lifecycle: Not Recommended for New Designs
Other/Packaging Methods: Cut Tape (CT)
Other/Manufacturing Applications: Industrial, Power Management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
Compliant with standard/REACH SVHC version: 2015/12/17
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