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Model ZXM62P03E6TC

Description 30V P-CHANNEL ENHANCEMENT MODE MOSFET

Brand: Diodes

Packaging SOT-23-6

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

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Technical parameters/number of channels:	1
Technical parameters/drain source resistance:	230 mΩ
Technical parameters/polarity:	P-Channel
Technical parameters/dissipated power:	625 mW
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Leakage source breakdown voltage:	30 V
Technical parameters/breakdown voltage of gate source:	±12.0 V
Technical parameters/Continuous drain current (Ids):	1.50 A
Technical parameters/rise time:	6.4 ns
Technical parameters/Input capacitance (Ciss):	330pF @25V(Vds)
Technical parameters/descent time:	6.4 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	55 ℃
Technical parameters/dissipated power (Max):	625mW (Ta)
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	6
Encapsulation parameters/Encapsulation:	SOT-23-6
Dimensions/Length:	3.1 mm
Dimensions/Width:	1.8 mm
Dimensions/Height:	1.3 mm
Dimensions/Packaging:	SOT-23-6
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC

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