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Model FDC6312P

Description PowerTrench® 双 P 通道 MOSFET，Fairchild Semiconductor PowerTrench® MOSFET 是优化的电源开关，可提高系统效率和功率密度。它们组合了小栅极电荷 (Qg)、小反向恢复电荷 (Qrr) 和软性反向恢复主体二极管，有助于快速切换交流/直流电源中的同步整流。最新的 PowerTrench® MOSFET 采用屏蔽栅极结构，可提供电荷平衡。利用这一先进技术，这些设备的 FOM（品质因素）显著低于前一代的 FOM。 PowerTrench® MOSFET 的软性主体二极管性能可无需缓冲电路或替换更高额定电压的 MOSFET。 ### MOSFET 晶体管，Fairchild Semiconductor Fairchild 提供大量 MOSFET 设备组合，包括高电压 (>250V) 低电压 (<250V) 类型。先进的硅技术提供更小的芯片尺寸，其整合到多种工业标准和耐热增强型封装中。 Fairchild MOSFET 通过降低电压峰值和过冲提供极佳的设计可靠性，以减少结电容和反向恢复电荷，无需额外外部元件即可保持系统启动和运行更长时间。

Brand: ON Semiconductor

Packaging TSOT-23-6

Delivery time

Packaging method Tape & Reel (TR)

Standard packaging quantity 1

Freight charges： In stock Freight rate：$13.00

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Inventory(6108) Minimum order quantity(1)

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Technical parameters/number of pins:	6
Technical parameters/drain source resistance:	0.115 Ω
Technical parameters/dissipated power:	0.96 W
Technical parameters/threshold voltage:	900 mV
Technical parameters/drain source voltage (Vds):	20 V
Technical parameters/rise time:	13 ns
Technical parameters/Input capacitance (Ciss):	467pF @10V(Vds)
Technical parameters/rated power (Max):	700 mW
Technical parameters/descent time:	8 ns
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-55 ℃
Technical parameters/dissipated power (Max):	960 mW
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	6
Encapsulation parameters/Encapsulation:	TSOT-23-6
Dimensions/Length:	3 mm
Dimensions/Width:	1.7 mm
Dimensions/Height:	1 mm
Dimensions/Packaging:	TSOT-23-6
Physical parameters/operating temperature:	-55℃ ~ 150℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Tape & Reel (TR)
Other/Manufacturing Applications:	Power Management, Industrial
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free

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	FDC6318P	Rochester	类似代替	SOT	ON Semiconductor PowerTrench 系列双 Si P沟道 MOSFET FDC6318P, 2.5 A, Vds=12 V, 6引脚 SOT-23封装