Technical parameters/rated voltage (DC): | -30.0 V |
|
Technical parameters/rated current: | -1.60 A |
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Technical parameters/drain source resistance: | 230 mΩ |
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Technical parameters/polarity: | P-Channel |
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Technical parameters/dissipated power: | 0.806 W |
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Technical parameters/drain source voltage (Vds): | 30 V |
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Technical parameters/breakdown voltage of gate source: | ±12.0 V |
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Technical parameters/Continuous drain current (Ids): | 1.50 A |
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Technical parameters/rise time: | 6.4 ns |
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Technical parameters/Input capacitance (Ciss): | 330pF @25V(Vds) |
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Technical parameters/rated power (Max): | 625 mW |
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Technical parameters/descent time: | 10.3 ns |
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Technical parameters/operating temperature (Max): | 150 ℃ |
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Technical parameters/operating temperature (Min): | -55 ℃ |
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Technical parameters/dissipated power (Max): | 625mW (Ta) |
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Encapsulation parameters/installation method: | Surface Mount |
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Package parameters/number of pins: | 6 |
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Encapsulation parameters/Encapsulation: | SOT-23-6 |
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Dimensions/Length: | 3.1 mm |
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Dimensions/Width: | 1.8 mm |
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Dimensions/Height: | 1.3 mm |
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Dimensions/Packaging: | SOT-23-6 |
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Physical parameters/operating temperature: | -55℃ ~ 150℃ (TJ) |
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Other/Product Lifecycle: | Active |
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Other/Packaging Methods: | Tape & Reel (TR) |
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Compliant with standards/RoHS standards: | RoHS Compliant |
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Compliant with standards/lead standards: | Lead Free |
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Compliant with the REACH SVHC standard: | No SVHC |
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| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
ZXM62P03E6
|
Vishay Semiconductor | 功能相似 | SOT-23 |
晶体管, MOSFET, P沟道, 2.6 A, -30 V, 0.11 ohm, 10 V, -1 V
|
||
ZXM62P03E6TC
|
Diodes | 类似代替 | SOT-23-6 |
30V P-CHANNEL ENHANCEMENT MODE MOSFET
|
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