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Model ZXMN3G32DN8TA
Description ZXMN3G32 系列 30 V 0.028 Ohm 双 N 沟道 增强模式 MOSFET - SOIC-8
Product QR code
Brand: Diodes
Packaging SOIC-8
Delivery time
Packaging method Tape & Reel (TR)
Standard packaging quantity 1
1.87  yuan 1.87yuan
  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2326) Minimum order quantity(1)
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Technical parameters/polarity:

Dual N-Channel

 

Technical parameters/dissipated power:

2.1 W

 

Technical parameters/drain source voltage (Vds):

30 V

 

Technical parameters/Continuous drain current (Ids):

7.10 A

 

Technical parameters/rise time:

3.1 ns

 

Technical parameters/Input capacitance (Ciss):

472pF @15V(Vds)

 

Technical parameters/rated power (Max):

1.25 W

 

Technical parameters/descent time:

9.7 ns

 

Technical parameters/operating temperature (Max):

150 ℃

 

Technical parameters/operating temperature (Min):

-55 ℃

 

Technical parameters/dissipated power (Max):

2100 mW

 

Encapsulation parameters/installation method:

Surface Mount

 

Package parameters/number of pins:

8

 

Encapsulation parameters/Encapsulation:

SOIC-8

 

Dimensions/Length:

5 mm

 

Dimensions/Width:

4 mm

 

Dimensions/Height:

1.5 mm

 

Dimensions/Packaging:

SOIC-8

 

Physical parameters/operating temperature:

-55℃ ~ 150℃ (TJ)

 

Other/Product Lifecycle:

Discontinued at Digi-Key

 

Other/Packaging Methods:

Tape & Reel (TR)

 

Compliant with standards/RoHS standards:

RoHS Compliant

 

Compliant with standards/lead standards:

Lead Free

 

Compliant with the REACH SVHC standard:

No SVHC

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
DMN3024LSD-13 DMN3024LSD-13 Diodes 类似代替 SOIC-8
2个N沟道 30V 6.8A
PDF
SI4922BDY-T1-E3 SI4922BDY-T1-E3 Vishay Semiconductor 功能相似 SOIC-8
MOSFET N-CH DUAL 30V 8A 8-SOIC
PDF
SI4922BDY-T1-E3 SI4922BDY-T1-E3 Vishay Siliconix 功能相似 SOIC-8
MOSFET N-CH DUAL 30V 8A 8-SOIC
PDF
ZXMN3F31DN8TA ZXMN3F31DN8TA Diodes 类似代替 SOIC-8
场效应管(MOSFET) ZXMN3F31DN8TA SO-8
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