Technical parameters/drain source resistance: 0.024 Ω
Technical parameters/dissipated power: 3.1 W
Technical parameters/threshold voltage: 1.8 V
Technical parameters/input capacitance: 2070pF @15V
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/thermal resistance: 50℃/W (RθJA)
Technical parameters/Input capacitance (Ciss): 2070pF @15V(Vds)
Technical parameters/rated power (Max): 3.1 W
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -50 ℃
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/height: 1.55 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Unknown
Other/Packaging Methods: Cut Tape (CT)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standard/REACH SVHC version: 2014/06/16
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
SI4834BDY-T1-E3
|
VISHAY | 类似代替 | SOIC-8 |
MOSFET DUAL N-CH 30V 5.7A 8-SOIC
|
||
SI4834BDY-T1-E3
|
Vishay Semiconductor | 类似代替 |
MOSFET DUAL N-CH 30V 5.7A 8-SOIC
|
|||
SI9926CDY-T1-E3
|
VISHAY | 类似代替 | SOIC-8 |
MOSFET DUAL N-CH 20V 8A 8-SOIC
|
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