Technical parameters/number of channels: 2
Technical parameters/drain source resistance: 24 mΩ
Technical parameters/polarity: N-CH
Technical parameters/dissipated power: 2.1 W
Technical parameters/drain source voltage (Vds): 30 V
Technical parameters/leakage source breakdown voltage: 30 V
Technical parameters/Continuous drain current (Ids): 7.3A
Technical parameters/rise time: 3.3 ns
Technical parameters/Input capacitance (Ciss): 608pF @15V(Vds)
Technical parameters/rated power (Max): 1.8 W
Technical parameters/descent time: 8 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 2100 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 8
Encapsulation parameters/Encapsulation: SOIC-8
External dimensions/length: 5 mm
External dimensions/width: 4 mm
External dimensions/height: 1.5 mm
External dimensions/packaging: SOIC-8
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Compliant with standards/REACH SVHC standards: No SVHC
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
DMN3024LSD-13
|
Diodes | 类似代替 | SOIC-8 |
2个N沟道 30V 6.8A
|
||
ZXMN3G32DN8TA
|
Diodes | 类似代替 | SOIC-8 |
ZXMN3G32 系列 30 V 0.028 Ohm 双 N 沟道 增强模式 MOSFET - SOIC-8
|
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