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Model SI4922BDY-T1-E3

Description VISHAY SI4922BDY-T1-E3 双路场效应管, MOSFET, 双N沟道, 8 A, 30 V, 0.0135 ohm, 12 V, 1.8 V

Brand: Vishay Semiconductor

Packaging SOIC-8

Delivery time

Packaging method Cut Tape (CT)

Standard packaging quantity 1

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Technical parameters/number of pins:	8
Technical parameters/drain source resistance:	0.0135 Ω
Technical parameters/polarity:	N-Channel, Dual N-Channel
Technical parameters/dissipated power:	2 W
Technical parameters/threshold voltage:	1.8 V
Technical parameters/Input capacitance:	2070pF @15V
Technical parameters/drain source voltage (Vds):	30 V
Technical parameters/Leakage source breakdown voltage:	30 V
Technical parameters/Continuous drain current (Ids):	8.00 A
Technical parameters/thermal resistance:	50℃/W (RθJA)
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	-50 ℃
Encapsulation parameters/installation method:	Surface Mount
Package parameters/number of pins:	8
Encapsulation parameters/Encapsulation:	SOIC-8
Dimensions/Length:	5 mm
Dimensions/Height:	1.55 mm
Dimensions/Packaging:	SOIC-8
Physical parameters/operating temperature:	-50℃ ~ 150℃
Other/Packaging Methods:	Cut Tape (CT)
Other/Manufacturing Applications:	Power Management, Industrial
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC
Compliant with standard/REACH SVHC version:	2015/06/15

Alternative material

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SI4834BDY-T1-E3	VISHAY	类似代替	SOIC-8	MOSFET DUAL N-CH 30V 5.7A 8-SOIC	PDF
SI4834BDY-T1-E3	Vishay Semiconductor	类似代替		MOSFET DUAL N-CH 30V 5.7A 8-SOIC	PDF
SI9926CDY-T1-E3	VISHAY	类似代替	SOIC-8	MOSFET DUAL N-CH 20V 8A 8-SOIC	PDF