Technical parameters/rated voltage (DC): | -150 V |
|
Technical parameters/rated current: | -500 mA |
|
Technical parameters/polarity: | PNP |
|
Technical parameters/dissipated power: | 225 mW |
|
Technical parameters/gain bandwidth product: | 300 MHz |
|
Technical parameters/breakdown voltage (collector emitter): | 150 V |
|
Technical parameters/Maximum allowable collector current: | 0.5A |
|
Technical parameters/minimum current amplification factor (hFE): | 60 @10mA, 5V |
|
Technical parameters/rated power (Max): | 225 mW |
|
Technical parameters/operating temperature (Max): | 150 ℃ |
|
Technical parameters/operating temperature (Min): | 55 ℃ |
|
Technical parameters/dissipated power (Max): | 300 mW |
|
Encapsulation parameters/installation method: | Surface Mount |
|
Package parameters/number of pins: | 3 |
|
Encapsulation parameters/Encapsulation: | SOT-23-3 |
|
Dimensions/Length: | 2.9 mm |
|
Dimensions/Width: | 1.3 mm |
|
Dimensions/Height: | 0.94 mm |
|
Dimensions/Packaging: | SOT-23-3 |
|
Physical parameters/materials: | Silicon |
|
Other/Product Lifecycle: | Unknown |
|
Other/Packaging Methods: | Tape & Reel (TR) |
|
Compliant with standards/RoHS standards: | RoHS Compliant |
|
Compliant with standards/lead standards: | Contains Lead |
|
Customs information/ECCN code: | EAR99 |
|
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT5401_D87Z
|
ON Semiconductor | 类似代替 | SOT-23-3 |
Trans GP BJT PNP 150V 0.6A 3Pin SOT-23 T/R
|
||
MMBT5401_D87Z
|
Fairchild | 类似代替 | SOT-23-3 |
Trans GP BJT PNP 150V 0.6A 3Pin SOT-23 T/R
|
||
MPS751
|
Central Semiconductor | 功能相似 | TO-226-3 |
放大器晶体管 Amplifier Transistors
|
||
MPS751
|
ON Semiconductor | 功能相似 | TO-92-3 |
放大器晶体管 Amplifier Transistors
|
||
ZTX549STZ
|
Diodes | 功能相似 | E-Line-3 |
PNP SILICON PLANAR MEDIUM POWER TRANSISTORS
|
©Copyright 2013-2025 ICGOODFIND (Shenzhen) Electronics Technology Co., Ltd.
The most helpful review