Technical parameters/frequency: 300 MHz
Technical parameters/polarity: PNP
Technical parameters/dissipated power: 350 mW
Technical parameters/gain bandwidth product: 300 MHz
Technical parameters/breakdown voltage (collector emitter): 150 V
Technical parameters/maximum allowable collector current: 0.6A
Technical parameters/minimum current amplification factor (hFE): 60 @10mA, 5V
Technical parameters/Maximum current amplification factor (hFE): 240
Technical parameters/rated power (Max): 350 mW
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): 55 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23-3
External dimensions/length: 2.92 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.93 mm
External dimensions/packaging: SOT-23-3
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT5401
|
先科ST | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
MMBT5401
|
Micro Commercial Components | 类似代替 | 3 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
|
|
YANGJIE | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
|
|
SHIKUES | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
|
|
FMS | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
MMBT5401
|
Diotec Semiconductor | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
|
|
YONGYUTAI | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
MMBT5401
|
ON Semiconductor | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
MMBT5401
|
Diodes | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
MMBT5401
|
Leshan Radio | 类似代替 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
MMBT5401
|
Fairchild | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
|
|
MDD | 类似代替 | PNP |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
|
|
GUANGDONG HOTTECH INDUSTRIAL | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
MMBT5401
|
SK Hynix | 类似代替 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
|
|
Zetex | 功能相似 |
ZXTP5401FL 系列 150 V 600 mA 表面贴装 PNP 高压 晶体管 - SOT-23-3
|
|||
ZXTP5401FLTA
|
Diodes Zetex | 功能相似 | SOT-23 |
ZXTP5401FL 系列 150 V 600 mA 表面贴装 PNP 高压 晶体管 - SOT-23-3
|
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