Technical parameters/number of pins: 3
Technical parameters/dissipated power: 350 mW
Technical parameters/breakdown voltage (collector emitter): 150 V
Technical parameters/minimum current amplification factor (hFE): 50
Technical parameters/rated power (Max): 350 mW
Technical parameters/DC current gain (hFE): 240
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 350 mW
Encapsulation parameters/installation method: Surface Mount
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: SOT-23
External dimensions/length: 2.9 mm
External dimensions/width: 1.3 mm
External dimensions/height: 0.96 mm
External dimensions/packaging: SOT-23
Physical parameters/materials: Silicon
Physical parameters/operating temperature: -55℃ ~ 150℃
Other/Product Lifecycle: Active
Other/Packaging Methods: Tape & Reel (TR)
Other/Manufacturing Applications: Industrial, power management
Compliant with standards/RoHS standards: RoHS Compliant
Compliant with standards/lead standards: Lead Free
Customs information/ECCN code: EAR99
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MMBT5401
|
先科ST | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
MMBT5401
|
Micro Commercial Components | 功能相似 | 3 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
|
|
YANGJIE | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
|
|
SHIKUES | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
|
|
FMS | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
MMBT5401
|
Diotec Semiconductor | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
|
|
YONGYUTAI | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
MMBT5401
|
ON Semiconductor | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
MMBT5401
|
Diodes | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
MMBT5401
|
Leshan Radio | 功能相似 | SOT-23 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
MMBT5401
|
Fairchild | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
|
|
MDD | 功能相似 | PNP |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
|
|
GUANGDONG HOTTECH INDUSTRIAL | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
MMBT5401
|
SK Hynix | 功能相似 | SOT-23-3 |
FAIRCHILD SEMICONDUCTOR MMBT5401. 单晶体管 双极, PNP, 150 V, 300 MHz, 350 mW, 600 mA, 240 hFE
|
||
MMBT5401-7
|
Diodes | 完全替代 | SOT-23-3 |
TRANS PNP 150V 0.6A SMD SOT23-3
|
||
MMBT5401-7-F
|
Multicomp | 功能相似 | SOT-23 |
MMBT5401-7-F 编带
|
||
MMBT5401-7-F
|
Diodes Zetex | 功能相似 | SOT-23 |
MMBT5401-7-F 编带
|
||
MMBT5401-7-F
|
Diodes | 功能相似 | SOT-23-3 |
MMBT5401-7-F 编带
|
||
MMBT5401-TP
|
Micro Commercial Components | 功能相似 | SOT-23-3 |
MICRO COMMERCIAL COMPONENTS MMBT5401-TP 双极性晶体管, PNP, 150VDC, SOT-23
|
||
MMBT5401_D87Z
|
ON Semiconductor | 类似代替 | SOT-23-3 |
MMBT5401 系列 150 V 0.6 A PNP 表面贴装 通用 放大器 - SOT-23
|
||
MMBT5401_D87Z
|
Fairchild | 类似代替 | SOT-23-3 |
MMBT5401 系列 150 V 0.6 A PNP 表面贴装 通用 放大器 - SOT-23
|
||
MPS751
|
Central Semiconductor | 功能相似 | TO-226-3 |
放大器晶体管 Amplifier Transistors
|
||
MPS751
|
ON Semiconductor | 功能相似 | TO-92-3 |
放大器晶体管 Amplifier Transistors
|
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