Technical parameters/breakdown voltage (collector emitter): 60 V
Technical parameters/minimum current amplification factor (hFE): 75 @1A, 2V
Technical parameters/rated power (Max): 625 mW
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-226-3
External dimensions/packaging: TO-226-3
Physical parameters/operating temperature: -65℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards:
Compliant with standards/lead standards:
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
MPS751RLRAG
|
ON Semiconductor | 类似代替 | TO-226-3 |
ON SEMICONDUCTOR MPS751RLRAG.. 单管二极管 齐纳, 7.5 V, 500 mW, SOD-123, 2 引脚, 150 °C
|
||
MPS751RLRP
|
ON Semiconductor | 功能相似 | TO-92 |
2000mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
||
MPS751RLRP
|
Motorola | 功能相似 |
2000mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
|
|||
|
|
New Jersey Semiconductor | 功能相似 | 3 |
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
|
||
MPSA05
|
Fairchild | 功能相似 | TO-226-3 |
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
|
||
MPSA05
|
NTE Electronics | 功能相似 |
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
|
|||
MPSA05
|
UTC | 功能相似 | TO-92 |
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
|
||
MPSA05
|
ON Semiconductor | 功能相似 | TO-226-3 |
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
|
||
MPSA05
|
Diodes | 功能相似 | TO-92-3 |
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
|
||
MPSA05
|
Micro Commercial Components | 功能相似 | TO-92 |
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92
|
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