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Model ZTX549STZ

Description PNP SILICON PLANAR MEDIUM POWER TRANSISTORS

Brand: Diodes

Packaging E-Line-3

Delivery time

Packaging method Bulk

Standard packaging quantity 1

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Technical parameters/rated voltage (DC):	-25.0 V
Technical parameters/rated current:	-1.00 A
Technical parameters/polarity:	PNP
Technical parameters/dissipated power:	1 W
Technical parameters/gain bandwidth product:	100 MHz
Technical parameters/breakdown voltage (collector emitter):	30 V
Technical parameters/Maximum allowable collector current:	1A
Technical parameters/minimum current amplification factor (hFE):	100 @500mA, 2V
Technical parameters/rated power (Max):	1 W
Technical parameters/operating temperature (Max):	150 ℃
Technical parameters/operating temperature (Min):	55 ℃
Technical parameters/dissipated power (Max):	1000 mW
Encapsulation parameters/installation method:	Through Hole
Package parameters/number of pins:	3
Encapsulation parameters/Encapsulation:	E-Line-3
Dimensions/Length:	4.95 mm
Dimensions/Width:	3.94 mm
Dimensions/Height:	4.95 mm
Dimensions/Packaging:	E-Line-3
Physical parameters/materials:	Silicon
Physical parameters/operating temperature:	-55℃ ~ 200℃ (TJ)
Other/Product Lifecycle:	Active
Other/Packaging Methods:	Bulk
Compliant with standards/RoHS standards:	RoHS Compliant
Compliant with standards/lead standards:	Lead Free
Compliant with the REACH SVHC standard:	No SVHC

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