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Model IRF9133
Description TO-220P-CH 60V 10A
Product QR code
Brand: Samsung
Packaging TO-220
Delivery time
Packaging method
Standard packaging quantity 1
0yuan
20+:
$ 0.0000
50+:
$ 0.0000
100+:
$ 0.0000
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$ 0.0000
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$ 0.0000
1000+:
$ 0.0000
5000+:
$ 0.0000
10000+:
$ 0.0000
Quantity
20+
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Price
$0.0000
$0.0000
$0.0000
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Price $ 0.0000 $ 0.0000 $ 0.0000 $ 0.0000 $ 0.0000
Start batch production 20+ 50+ 100+ 300+ 500+
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  • Freight charges：   In stock Freight rate：$13.00
  • Quantity： Inventory(2273) Minimum order quantity(20)
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Technical parameters/polarity:

P-CH

 

Technical parameters/drain source voltage (Vds):

60 V

 

Technical parameters/Continuous drain current (Ids):

10A

 

Encapsulation parameters/installation method:

Through Hole

 

Encapsulation parameters/Encapsulation:

TO-220

 

Dimensions/Packaging:

TO-220

 

Other/Product Lifecycle:

Obsolete

 

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Alternative material

Model Brand Similarity Encapsulation Introduction Data manual
2N6804 2N6804 International Rectifier 功能相似
Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
PDF
2N6804 2N6804 Infineon 功能相似 TO-204
Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
PDF
2N6804 2N6804 Microsemi 功能相似 TO-204
Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
PDF
IRF9130 IRF9130 Intersil 功能相似
-12A ， -100V ， 0.30欧姆，P沟道功率MOSFET -12A, -100V, 0.30 Ohm, P-Channel Power MOSFET
PDF
RFM6P10 RFM6P10 Harris 功能相似 TO-220AB
P沟道 100V 6A

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