Technical parameters/dissipated power: 4W (Ta), 75W (Tc)
Technical parameters/drain source voltage (Vds): 100 V
Technical parameters/rise time: 140 ns
Technical parameters/rated power (Max): 75 W
Technical parameters/descent time: 140 ns
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 4W (Ta), 75W (Tc)
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-204
External dimensions/packaging: TO-204
Physical parameters/operating temperature: -55℃ ~ 150℃ (TJ)
Other/Product Lifecycle: Obsolete
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Contains Lead
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6804
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
|
|||
2N6804
|
Infineon | 功能相似 | TO-204 |
Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
|
||
2N6804
|
Microsemi | 功能相似 | TO-204 |
Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
|
||
|
IRF9130
|
Intersil | 功能相似 |
INFINEON IRF9130 晶体管, MOSFET, P沟道, 11 A, -100 V, 300 mohm, -10 V, -4 V
|
|||
JANTX2N6804
|
Microsemi | 功能相似 | TO-204 |
Trans MOSFET P-CH 100V 11A 3Pin(2+Tab) TO-3
|
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