Technical parameters/Input capacitance (Ciss): 860pF @25V(Vds)
Technical parameters/operating temperature (Max): 150 ℃
Technical parameters/operating temperature (Min): -55 ℃
Technical parameters/dissipated power (Max): 75000 mW
Package parameters/number of pins: 3
Encapsulation parameters/Encapsulation: TO-204
External dimensions/packaging: TO-204
Other/Product Lifecycle: Active
Compliant with standards/RoHS standards: Non-Compliant
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6804
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
|
|||
2N6804
|
Infineon | 功能相似 | TO-204 |
Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
|
||
2N6804
|
Microsemi | 功能相似 | TO-204 |
Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
|
||
IRF9130
|
Intersil | 功能相似 |
INFINEON IRF9130 晶体管, MOSFET, P沟道, 11 A, -100 V, 300 mohm, -10 V, -4 V
|
|||
JANTX2N6804
|
Microsemi | 功能相似 | TO-204 |
Trans MOSFET P-CH 100V 11A 3Pin(2+Tab) TO-3
|
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