Technical parameters/drain source resistance: 300 mΩ
Technical parameters/polarity: P-Channel
Technical parameters/dissipated power: 75.0 W
Technical parameters/product series: IRF9130
Technical parameters/drain source voltage (Vds): -100 V
Technical parameters/leakage source breakdown voltage: -100 V
Technical parameters/Continuous drain current (Ids): -11.0 A
Encapsulation parameters/installation method: Through Hole
Package parameters/number of pins: 3
Other/Product Lifecycle: Active
Other/Packaging Methods: Bulk
Compliant with standards/RoHS standards: Non-Compliant
Compliant with standards/lead standards: Lead Free
| Model | Brand | Similarity | Encapsulation | Introduction | Data manual | |
|---|---|---|---|---|---|---|
2N6804
|
International Rectifier | 功能相似 |
Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
|
|||
2N6804
|
Infineon | 功能相似 | TO-204 |
Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
|
||
2N6804
|
Microsemi | 功能相似 | TO-204 |
Power Field-Effect Transistor, 11A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,
|
||
IRF9130
|
Intersil | 功能相似 |
INFINEON IRF9130 晶体管, MOSFET, P沟道, 11 A, -100 V, 300 mohm, -10 V, -4 V
|
|||
JANTX2N6804
|
Microsemi | 功能相似 | TO-204 |
Trans MOSFET P-CH 100V 11A 3Pin(2+Tab) TO-3
|
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