Model/Brand/Package
Category/Description
Inventory
Price
Data
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Category: IGBTtransistorDescription: ON SEMICONDUCTOR NGTB10N60R2DT4G Single transistor, IGBT, 20 A, 1.7 V, 72 W, 600 V, TO-252, 3 pins87235+$5.945425+$5.505050+$5.1967100+$5.0646500+$4.97652500+$4.86645000+$4.822410000+$4.7563 -
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Category: IGBTtransistorDescription: IGBT Discrete, On Semiconductor Insulated Gate Bipolar Transistor (IGBT), used for motor drivers and other high current switching applications. ###IGBT discrete, On Semiconductor insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.27191+$41.234810+$38.8689100+$37.1113250+$36.8409500+$36.57051000+$36.26632500+$35.99595000+$35.8269 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 30A 3Pin(3+Tab) TO-3PN39961+$53.044410+$50.0009100+$47.7399250+$47.3921500+$47.04431000+$46.65302500+$46.30515000+$46.0877 -
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Category: IGBTtransistorDescription: IGBT Discrete, Toshiba IGBT discrete components and modules, Toshiba insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.90901+$37.627210+$35.4683100+$33.8645250+$33.6178500+$33.37101000+$33.09352500+$32.84675000+$32.6925 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 30A 167000mW 3Pin(3+Tab) TO-220 Tube70035+$12.013650+$11.5002200+$11.2127500+$11.14081000+$11.06892500+$10.98685000+$10.93547500+$10.8841 -
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Category: IGBTtransistorDescription: IGBT Discrete, Renesas Electronics IGBT (Insulated Gate Bipolar Transistor) is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.25545+$19.309750+$18.4845200+$18.0224500+$17.90681000+$17.79132500+$17.65935000+$17.57687500+$17.4942 -
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Category: IGBTtransistorDescription: IGBT STMicroelectronics IGBT discrete components and modules, STMicroelectronics insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.283710+$11.8428100+$11.2507500+$10.85591000+$10.83622000+$10.75725000+$10.65857500+$10.579610000+$10.5401 -
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Category: IGBTtransistorDescription: SLLIMM™ STMicroelectronics has expanded the functionality of IGBT intelligent power modules by introducing the second SLLIMM series of intelligent power modules. Due to their optimal balance of conduction and conversion energy, combined with excellent robustness and EMI behavior, they can improve the efficiency of motor drive applications, enabling them to operate up to 20 kHz. They offer fully molded or DBC based packaging with high electrode currents. Small Low Loss Intelligent Molding Module (SLLIMM) ™) Can improve the efficiency of household appliance motor drivers. The Intelligent Power Module (IPMS) can provide a direct connection between a low-voltage microcontroller and a power powered motor. Three phase IGBT inverter bridge, including control IC for gate drive and freewheeling diode 175 ° C maximum working contact temperature 600V, rated from 8A to 35A DC (at 25 ° C) low VCE (sat) with the lowest Rth value on the market, used for DBC package model isolation rated at 1500 Vrms/min optimized driver and silicon, providing low EMI separate open emitter output 3.3V, 5V, 15V CMOS/TTL input undervoltage locking internal limiting diode interlock function intelligent shutdown function comparator, used to prevent overheating and overcurrent faults # # Motor controller and driver, STMicroelectronics23081+$127.697210+$124.365950+$121.8120100+$120.9236200+$120.2574500+$119.36911000+$118.81392000+$118.2587 -
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Category: IGBTtransistorDescription: STMICROELECTRONICS STGB10M65DF2 Single transistor, IGBT, 20 A, 1.55 V, 115 W, 650 V, TO-263, 3 pins97295+$5.896825+$5.460050+$5.1542100+$5.0232500+$4.93582500+$4.82665000+$4.783010000+$4.7174 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 330V 90A 250000mW 3Pin(3+Tab) TO-220 Tube59555+$32.462850+$31.0755200+$30.2986500+$30.10441000+$29.91022500+$29.68825000+$29.54957500+$29.4108 -
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Category: IGBTtransistorDescription: IGBT STMicroelectronics IGBT discrete components and modules, STMicroelectronics insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.94795+$19.275850+$18.4520200+$17.9907500+$17.87541000+$17.76012500+$17.62835000+$17.54597500+$17.4635 -
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Category: IGBTtransistorDescription: STGW20NC60V Series 600 V 30 A flange installation extremely fast IGBT - TO-24786905+$5.738925+$5.313850+$5.0162100+$4.8887500+$4.80362500+$4.69745000+$4.654810000+$4.5911 -
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Category: IGBTtransistorDescription: NChannel 12A-600V TO-220 PowerMESH ⑩ IGBT N-CHANNEL 12A-600V TO-220 PowerMESH ⑩ IGBT1624 -
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Category: IGBTtransistorDescription: 1200V,15A,HSeries, High Speed Trench Field Cut Off IGBT70735+$19.802350+$18.9560200+$18.4821500+$18.36361000+$18.24522500+$18.10985000+$18.02517500+$17.9405 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 650V 80A 62500mW 3Pin(3+Tab) TO-3pF Tube87675+$18.706050+$17.9066200+$17.4589500+$17.34701000+$17.23512500+$17.10725000+$17.02727500+$16.9473 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 15A 3Pin DPAK ROHS465110+$7.1940100+$6.8343500+$6.59451000+$6.58252000+$6.53465000+$6.47467500+$6.426610000+$6.4027 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 60A 200000mW 3Pin(2+Tab) D2PAK T/R44495+$19.802350+$18.9560200+$18.4821500+$18.36361000+$18.24522500+$18.10985000+$18.02517500+$17.9405 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 18A 60000mW 3Pin(2+Tab) DPAK T/R56241+$67.727010+$64.7823100+$64.2523250+$63.8400500+$63.19221000+$62.89772500+$62.48555000+$62.1321 -
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Category: IGBTtransistorDescription: IGBT STMicroelectronics IGBT discrete components and modules, STMicroelectronics insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.85585+$21.035450+$20.1365200+$19.6331500+$19.50721000+$19.38142500+$19.23755000+$19.14767500+$19.0577 -
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Category: IGBTtransistorDescription: NChannel 600V-8A - D2PAK/DPAK/TO-220 short-circuit rated IGBT PowerMESH N-channel 600V - 8A - D2PAK / DPAK / TO-220 Short circuit rated PowerMESH IGBT148910+$7.8576100+$7.4647500+$7.20281000+$7.18972000+$7.13735000+$7.07187500+$7.019510000+$6.9933 -
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Category: IGBTtransistorDescription: NChannel 50A -600V ISOTOP PowerMESH IGBT N-CHANNEL 50A -600V ISOTOP PowerMESH IGBT50821+$134.634010+$131.121850+$128.4291100+$127.4925200+$126.7901500+$125.85351000+$125.26812000+$124.6827 -
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Category: IGBTtransistorDescription: IGBT STMicroelectronics IGBT discrete components and modules, STMicroelectronics insulated gate bipolar transistor or IGBT is a three terminal power semiconductor device known for its high efficiency and fast switching. IGBT combines the simple gate driving characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors by combining isolated gate FETs used for input control and bipolar power transistors used as switches in a single device.920010+$8.2932100+$7.8785500+$7.60211000+$7.58832000+$7.53305000+$7.46397500+$7.408610000+$7.3809 -
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Category: IGBTtransistorDescription: STGP30H65F Series 650 V 30 A Trench Gate Field Cut Off IGBT - TO-220-353065+$23.807250+$22.7898200+$22.2200500+$22.07761000+$21.93512500+$21.77245000+$21.67067500+$21.5689 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 6A 48000mW 3Pin(2+Tab) DPAK Tube9998 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 1200V 16A 105000mW 3Pin(3+Tab) IPAK Tube14921+$49.782110+$46.9258100+$44.8039250+$44.4775500+$44.15101000+$43.78382500+$43.45735000+$43.2533 -
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Category: IGBTtransistorDescription: Trans IGBT Chip N-CH 600V 40A 140000mW 3Pin(3+Tab) TO-247 Tube84405+$11.784250+$11.2806200+$10.9986500+$10.92811000+$10.85762500+$10.77705000+$10.72677500+$10.6763 -
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Category: IGBTtransistorDescription: NChannel 18A-600V TO-220/D2PAK short circuit protection PowerMESH IGBT N-CHANNEL 18A - 600V TO-220/D2PAK SHORT CIRCUIT PROOF PowerMESH IGBT1367 -
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Category: IGBTtransistorDescription: NChannel fixed support 20A - D2PAK/I2PAK internal clamp PowerMESH TM IGBT N-CHANNEL CLAMPED 20A - D2PAK/I2PAK INTERNALLY CLAMPED PowerMESH TM IGBT23395+$30.251550+$28.9587200+$28.2348500+$28.05381000+$27.87282500+$27.66595000+$27.53667500+$27.4074
